集成电路先进制造技术进展与趋势

doi:10.11871/jfdc.issn.2096-742X.2021.05.002

数据与计算发展前沿 ›› 2021, Vol. 3 ›› Issue (5): 28-39.

doi: 10.11871/jfdc.issn.2096-742X.2021.05.002

• 专刊：我国信息技术领域“卡脖子”问题与对策 • 上一篇下一篇

集成电路先进制造技术进展与趋势

张睿^1,^2,^*(),虞小鹏^1,²(),程然^1,²(),沈强³(),耿红艳³(),高大为^1,²(),吴汉明^1,²()

1.浙江大学,微纳电子学院,先进集成电路制造技术研究所,浙江杭州 311200
2.浙江大学,杭州国际科创中心,浙江杭州 311200
3.芯创智（北京）微电子有限公司,北京 100871

收稿日期:2021-09-21 出版日期:2021-10-20 发布日期:2021-11-24
通讯作者: 张睿
作者简介:张睿,浙江大学,副教授,博士毕业于日本东京大学电子工程系,主要研究方向为半导体器件、集成电路先进制造技术。
本文承担工作为MOSFET器件性能提升。
ZHANG Rui received his Ph.D. degree from the Department of Electrical Engineering, The University of Tokyo. He is currently with Zhejiang University as an associate professor. His research interests include semiconductor devices and advanced IC manufacturing technology.
In this paper, he undertakes the performance improvement of MOSFET device.
E-mail: ruizhang@zju.edu.cn|虞小鹏,浙江大学,教授,博士毕业于浙江大学,主要从事模拟与射频集成电路设计方面的研究。
本文承担工作为寄生效应抑制。
YU Xiaopeng received hisPh.D. degree from the Department of Optical Science and Engineering, Zhejiang University. He is currently with Zhejiang University as a full professor. His research interests include the design of analog and RFIC.
In this paper, he undertakes the suppression of parasitic effects.
E-mail: yuxiaopeng@zju.edu.cn|程然,浙江大学,副教授,博士毕业于新加坡国立大学电气工程系,主要从事新型半导体逻辑器件以及低温电路的模型及可靠性研究。
本文承担工作为寄生效应抑制。
CHENG Ran received her Ph.D. degree from the Department of Electrical Engineering, National University of Singapore. She is currently with Zhejiang Univer-sity as an associate professor. Her research interests include the reliability of advanced MOSFETs and low temper-ature circuits.
In this paper, she undertakes the suppression of parasitic effects.
E-mail: chengran@zju.edu.cn|沈强,浙江大学,高级工程师,本科毕业于北京大学微电子学专业,主要研究方向为MEMS、低功耗设计。
本文承担工作为MOSFET器件性能提升。
SHEN Qiang received his bachelor’s degree from Peking University, majoring in microelectronics. He is currently with Zhejiang University as a senior engineer. His main research interests include MEMS and low power design.
In this paper, he undertakes the performance improvement of MOSFET device.
E-mail: stout_shen@qq.com|耿红艳,浙江大学,工程师,硕士,毕业于中国科学院半导体研究所电子学专业,主要研究方向为红外探测器设计、制造与性能提升。本文承担MOSFET器件性能提升。
GENG Hongyan received her bachelor’s degree from the Ins-titute of semiconductors, CAS, majoring in electronics. She is currently with Zhejiang University as an engineer. Her main research interests include the design, manufacture, and performance improvement of infrared detectors.
In this paper, she undertakes the performance improvement of MOSFET devices.
E-mail: 18810348107@163.com|高大为,浙江大学,教授,日本九州大学博士,主要从事先进集成电路制造技术领域的研究。
本文承担器件集成度提升技术。
GAO Dawei received his Ph.D. degree from Kyushu University. He is currently with Zhejiang University as a full professor. His research inter-ests include advanced IC manufacturing technology.
In this paper, he undertakes the improvement of device density during IC manufacturing.
E-mail: david_gao@icsprout.com|吴汉明,浙江大学,教授,中国工程院院士,参与并领导我国0.13μm至14nm七代集成电路制造成套工艺研发。本文承担器件集成度提升技术。
WU Hanming is currently with Zhejiang University as a full professor. He is a fellow of Chinese Academy of Engineering. He has been lead-ing/participating in the development of seven generations of IC manufacturing technology from 0.13-μm node to 14-nm node.
In this paper, he undertakes the improvement of device density during IC manufacturing.
E-mail: hanmingwu@zju.edu.cn

Recent Progresses on Advanced VLSI Manufacturing Techniques

ZHANG Rui^1,^2,^*(),YU Xiaopeng^1,²(),CHENG Ran^1,²(),SHEN Qiang³(),GENG Hongyan³(),GAO Dawei^1,²(),WU Hanming^1,²()

1. Institute of Advanced VLSI Manufacturing, College of Micro-Nano Electronics, Zhejiang University, Hangzhou, Zhejiang 311200, China
2. ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, China
3. EtownIP Microelectronics (Beijing) Co., Ltd., Beijing 100871, China

Received:2021-09-21 Online:2021-10-20 Published:2021-11-24
Contact: ZHANG Rui

摘要/Abstract

摘要：

【目的】近年来随着摩尔定律逼近物理极限,传统的器件尺寸微缩变得越来越困难。尽管近年来人们开始尝试探索以碳基材料为代表的新材料、以量子计算为代表的新原理集成电路技术,但以传统硅基场效应晶体管为基础的CMOS电路仍将是集成电路发展的优选方案和主流趋势。为了持续提升集成电路性能和集成度,场效应晶体管器件技术出现了重大变革,并伴随着集成电路制造技术的不断革新。【方法】基于场效应晶体管器件性能提升的原理,阐述了通过引入新材料、新结构、新工艺方法,实现器件性能提升和集成度增大的先进制造技术,其中主要包括以高介电常数介质/金属栅和FinFET/SOI/Nanosheet MOSFET结构为代表的器件电学性能提升技术、以空气侧墙和Co局部接触金属材料为代表的寄生效应抑制技术以及以先进光刻和Forksheet/CFET为代表的器件布局紧凑化技术。【结果】基于这些新方法,集成电路制造技术近年来出现了诸多突破性进展,成功推进摩尔定律向更高水平延伸,也为集成电路技术在未来各应用场景下发挥关键作用奠定了基础。【结论】集成电路先进制造为基础的重要技术革新将促进信息社会的进一步发展和融合。

关键词: 集成电路, 先进制造技术, 电学性能, 集成度

Abstract:

[Objective] Recently, conventional device scaling is becoming increasingly difficult since the physical limits such as the short channel effect have severely restricted the effectiveness of Moore’s Law. Although alternative techniques, such as Carbon-based new materials devices and non-CMOS logic like quantum computing, have been attracting interest as candidates of future circuits, the VLSI circuit based on conventional Si MOSFETs is still the most promising solution and the main trend of advanced electronics. In order to further improve the electrical properties of VLSI and obtain the larger device integration density in circuits, significant progress has been achieved in the metal-oxide-semiconductor field-effect transistor (MOSFET) technology as well as the manufacturing techniques of microelectronics. [Methods] Advanced manufacturing has been comprehensively examined for MOSFETs by applying new materials, structures, and methodologies. Important development has been achieved such as the device performance enhancement via the high-k/metal gate and FinFET/SOI/Nanosheet MOSFET techniques, suppression of parasitic effects using air-spacer, and Cobalt local contact metal, and device density enhancement through advanced lithography methods and Forksheet/CFET techniques. [Results] Despite these achievements, the advanced manufacturing techniques have been significantly optimized to obtain high performance and high-density MOSFETs in modern VLSI circuits, which satisfies the requirements of future high performance and energy-efficient VLSI. [Conclusions] We suggest that the advanced manufacture of MOSFETs be one of the most important boosters to expand the application of VLSI in future electrical and information technology.

Key words: VLSI, advanced manufacturing, electrical performance, integration density

张睿,虞小鹏,程然,沈强,耿红艳,高大为,吴汉明. 集成电路先进制造技术进展与趋势[J]. 数据与计算发展前沿, 2021, 3(5): 28-39.

ZHANG Rui,YU Xiaopeng,CHENG Ran,SHEN Qiang,GENG Hongyan,GAO Dawei,WU Hanming. Recent Progresses on Advanced VLSI Manufacturing Techniques[J]. Frontiers of Data and Computing, 2021, 3(5): 28-39.

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参数	变化为
器件尺寸	1/k
器件面积	1/k2
Id	1/k
开启时间	1/k
功率	1/k2
功率密度	1
单次计算能耗	1/k

集成电路先进制造技术进展与趋势

Recent Progresses on Advanced VLSI Manufacturing Techniques

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