Recent Progresses on Advanced VLSI Manufacturing Techniques

doi:10.11871/jfdc.issn.2096-742X.2021.05.002

Abstract

Abstract:

[Objective] Recently, conventional device scaling is becoming increasingly difficult since the physical limits such as the short channel effect have severely restricted the effectiveness of Moore’s Law. Although alternative techniques, such as Carbon-based new materials devices and non-CMOS logic like quantum computing, have been attracting interest as candidates of future circuits, the VLSI circuit based on conventional Si MOSFETs is still the most promising solution and the main trend of advanced electronics. In order to further improve the electrical properties of VLSI and obtain the larger device integration density in circuits, significant progress has been achieved in the metal-oxide-semiconductor field-effect transistor (MOSFET) technology as well as the manufacturing techniques of microelectronics. [Methods] Advanced manufacturing has been comprehensively examined for MOSFETs by applying new materials, structures, and methodologies. Important development has been achieved such as the device performance enhancement via the high-k/metal gate and FinFET/SOI/Nanosheet MOSFET techniques, suppression of parasitic effects using air-spacer, and Cobalt local contact metal, and device density enhancement through advanced lithography methods and Forksheet/CFET techniques. [Results] Despite these achievements, the advanced manufacturing techniques have been significantly optimized to obtain high performance and high-density MOSFETs in modern VLSI circuits, which satisfies the requirements of future high performance and energy-efficient VLSI. [Conclusions] We suggest that the advanced manufacture of MOSFETs be one of the most important boosters to expand the application of VLSI in future electrical and information technology.

Key words: VLSI, advanced manufacturing, electrical performance, integration density

ZHANG Rui,YU Xiaopeng,CHENG Ran,SHEN Qiang,GENG Hongyan,GAO Dawei,WU Hanming. Recent Progresses on Advanced VLSI Manufacturing Techniques[J]. Frontiers of Data and Computing, 2021, 3(5): 28-39.

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参数	变化为
器件尺寸	1/k
器件面积	1/k2
Id	1/k
开启时间	1/k
功率	1/k2
功率密度	1
单次计算能耗	1/k