Frontiers of Data and Domputing ›› 2021, Vol. 3 ›› Issue (5): 4-27.doi: 10.11871/jfdc.issn.2096-742X.2021.05.001

• Special Issue: Problems and Counter measures in the field of In fomation Tellnology in China • Previous Articles     Next Articles

Carbon-Based Integrated Circuit Technology: Development and Forecast

XU Haitao1,*(),PENG Lianmao2,*()   

  1. 1. Beijing Hua Tan Yuan Xin Electronics Technology Co., Ltd., Beijing 100195, China
    2. Peking University, Beijing 100871, China
  • Received:2021-10-01 Online:2021-10-20 Published:2021-11-24
  • Contact: XU Haitao,PENG Lianmao E-mail:htxu@bicic.cn;lmpeng@pku.edu.cn

Abstract:

[Objective] The development of artificial intelligence, big data, and other fields has increasingly higher requirements for chip computing power and energy efficiency. Silicon-based chip technology is restricted by the power wall, storage wall, and size reduction, and is facing increasingly severe challenges. New materials and new chip architectures are needed to push the information and electronics industry forward. Carbon nanotube CMOS technology is currently the most promising next-generation integrated circuit technology. [Methods] Aiming at addressing the key technologies that need to be broken through in the development of carbon nanotube integrated circuits from three aspects: preparation of carbon nanotube materials for chips, carbon nanotube transistor technology and system integration. The research progress is elaborated, and the challenges and next steps are analyzed. [Results] After more than 20 years of development in carbon nanotube integrated circuit technology, major progress and breakthroughs have been made in materials, devices and system integration, including the preparation of high-purity semiconductor carbon nanotube arrays, high-performance ballistic transport carbon nanotube transistors close to the theoretical limit and carbon nanotube three-dimensional monolithic integrated systems, etc. [Conclusions] Carbon nanotubes are ideal channel materials for field-effect transistors, which can achieve high-speed and low-power ballistic transport. Combined with the architecture optimization of three-dimensional monolithic integration, carbon nanotube integrated circuit technology will show great advantages and potential in terms of performance, power consumption, chip area, function integration, cost, etc., and meet the needs of future information processing for chips.

Key words: carbon nanotube, field effect transistor, integrated circuit, ballistic transport, three dimensional monolithic integration