Analysis of Key Technology of Terahertz Communication Chip and Development of Communication System

doi:10.11871/jfdc.issn.2096-742X.2021.05.006

Abstract

Abstract:

[Objective] With the increasing shortage of low-frequency spectrum resources in modern wireless communication, the terahertz band which is rich in spectrum resources and terahertz communication which has larger bandwidth and higher confidentiality have shown their advantage. It has become the key candidate of the next generation wireless communication technology with its core in terahertz chip. [Methods] This paper mainly introduces terahertz chip technology and chip-based communication technology. We will start from the key terahertz chips and devices, analyzing the existing achievements and future development trend of discrete devices based on Schottky diode chips, like mixer and frequency multiplier, to terahertz chips and consider the technical development trends and application scenario of the terahertz communication system in the future based on terahertz chip technology. [Results] Terahertz discrete devices based on Schottky diodes, such as frequency multiplier and mixer, are developing towards high frequency band, large bandwidth, and high integration. Regarding to terahertz chips, chips based on InP, GaAs, GaN, and silicon technology are developing towards high power, high frequency, and high integration, while it is expected to form a pattern of coordinated development of InP and GaN process in the future. [Conclusions] In the future, the terahertz communication system based on chip technology can develop towards large-scale frequency division multiplexing (FDM), large-scale MIMO, inductive communication integration, photoelectric fusion, and complex multiplexing system integrating technologies such as FDM and polarization multiplexing. We also hope to discuss and imagine the development trend of terahertz chips and the development direction of communication systems based on terahertz chip technology.

Key words: Terahertz communication, Terahertz chip, Terahertz communication system, Frequency division multiplexing (FDM), Large-scale MIMO, Inductive communication integration, Photoelectric fusion, Complex multiplexing system

CAO Haoyi,DONG Yazhou,WANG Zheng,KOU Wei,ZHANG Qianyu,TONG Qinwen,YANG Ziqiang,GONG Sen,ZENG Hongxin,ZHANG Yaxin. Analysis of Key Technology of Terahertz Communication Chip and Development of Communication System[J]. Frontiers of Data and Computing, 2021, 3(5): 82-97.

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时间	系统类型	中心频率	通信速率/Gbps	通道数	其他复用方式	参考文献
2013	微波光子学	225GHz、237.5GHz 250GHz	100	3	\	[30]
2016	微波光子学	300-500GHz（间隔25GHz）	160	8	\	[31]
2019	微波光子学	124.5-150.5GHz	1056	4	4×4MIMO,PDM,	[32]
2020	微波光子学	320GHz、380GHz	600	2	PDM	[33]

时间	系统类型	系统技术特点	中心频率/GHz	通信速率/Gbps	通信距离/m	参考文献
2017	微波光子学	2×2MIMO,PDM ,16CAP	141	352	0.2	[39]
2019	微波光子学	4×4MIMO,PDM, FDM,PS,64QAM	124.5-150.5	1056	3.1	[32]
2020	微波光子学	PDM,OFDM,PS ,64QAM	320-380	600	2.8	[33]